Company Filing History:

21 out of 12,867

Advanced Micro Devices Corporation

Years Active: 2001-2014

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32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8847205 - Spacer for a gate electrode having tensile stress and a method of forming the same (2014-09-30),

2. 8772178 - Technique for forming a dielectric interlayer above a structure including closely spaced lines (2014-07-08),

3. 8759232 - Compressive stress transfer in an interlayer dielectric of a semiconductor device by providing a bi-layer of superior adhesion and internal stress (2014-06-24),

4. 8741787 - Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment (2014-06-03),

5. 8609555 - Increased stability of a complex material stack in a semiconductor device by providing fluorine enriched interfaces (2013-12-17),

6. 8450172 - Non-insulating stressed material layers in a contact level of semiconductor devices (2013-05-28),

7. 8415257 - Enhanced adhesion of PECVD carbon on dielectric materials by providing an adhesion interface (2013-04-09),

8. 8338284 - Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer (2012-12-25),

9. 8211795 - Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment (2012-07-03),

10. 8084088 - Method of improving the wafer-to-wafer thickness uniformity of silicon nitride layers (2011-12-27),

11. 7998882 - Particle reduction in PECVD processes for depositing low-k material by using a plasma assisted post-deposition step (2011-08-16),

12. 7807233 - Method of forming a TEOS cap layer at low temperature and reduced deposition rate (2010-10-05),

13. 7381660 - Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness (2008-06-03),

14. 7381602 - Method of forming a field effect transistor comprising a stressed channel region (2008-06-03),

15. 7341903 - Method of forming a field effect transistor having a stressed channel region (2008-03-11),

Title: Hartmut Ruelke: A Leader in Semiconductor Innovations

Introduction: Hartmut Ruelke, based in Dresden, Germany, is a prominent figure in the field of semiconductor innovations. With an impressive portfolio of 32 patents, Ruelke has significantly contributed to advancements in technology that optimize the performance of electronic devices.

Latest Patents: Among his latest patents, Ruelke developed a "Spacer for a Gate Electrode Having Tensile Stress and a Method of Forming the Same," which describes a process for depositing a silicon nitride layer that exhibits controllable tensile stress. By reducing the deposition rate and maintaining low bias power in a plasma atmosphere, this invention allows for the formation of sidewall spacer elements that enhance charge carrier mobility, thereby improving the conductivity of the channel region in field-effect transistors.

Another notable patent is his "Technique for Forming a Dielectric Interlayer Above a Structure Including Closely Spaced Lines." This patent outlines a method for depositing a silicate interlayer dielectric using SACVD or HDP-CVD techniques. This approach helps avoid the generation of voids, even in devices with tightly spaced lines of 200 nm or less, ensuring higher production yields and lower costs in manufacturing processes.

Career Highlights: Ruelke has made his mark in the industry by working with leading technology companies. His experience includes prominent roles at Advanced Micro Devices Corporation and Globalfoundries Inc., where he played a key role in developing cutting-edge technologies.

Collaborations: Throughout his career, Ruelke has collaborated with talented professionals such as Joerg Hohage and Minh Van Ngo. These partnerships have contributed to innovative solutions and advancements in semiconductor technologies.

Conclusion: Hartmut Ruelke continues to influence the semiconductor industry with his pioneering innovations and extensive patent portfolio. His contributions not only enhance the performance of electronic devices but also pave the way for future advancements in technology.

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