The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Sep. 27, 2010
Kai Frohberg, Niederau, DE;
Hartmut Ruelke, Dresden, DE;
Volker Jaschke, Radebeul, DE;
Joerg Hohage, Dresden, DE;
Frank Seliger, Dresden, DE;
Kai Frohberg, Niederau, DE;
Hartmut Ruelke, Dresden, DE;
Volker Jaschke, Radebeul, DE;
Joerg Hohage, Dresden, DE;
Frank Seliger, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In sophisticated semiconductor devices, strain-inducing materials having a reduced dielectric strength or having certain conductivity, such as metal nitride and the like, may be used in the contact level in order to enhance performance of circuit elements, such as field effect transistors. For this purpose, a strain-inducing material may be efficiently encapsulated on the basis of a dielectric layer stack that may be patterned prior to forming the actual interlayer dielectric material in order to mask sidewall surface areas on the basis of spacer elements.