The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
May. 25, 2011
Christof Streck, Coswig, DE;
Hartmut Ruelke, Dresden, DE;
Heinz-juergen Voss, Radebeul, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
When forming complex metallization systems, a sensitive material, such as a ULK material, may be deposited on a silicon-containing dielectric material, such as an etch stop material, with superior adhesion by performing a surface treatment on the basis of fluorine radicals. Due to the fluorine treatment, silicon-fluorine bonds are generated, which are then broken up upon interacting with the chemically active component during the further deposition process. Consequently, the subsequent material layer is chemically bonded to the underlying material, thereby imparting superior stability to the interface, which in turn may result in superior robustness and reliability of the metallization system upon performing reflowing processes and operating complex packaged semiconductor devices.