Christof Streck

This inventor holds 21 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2004-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Christof Streck. Retrieved from https://idiyas.com/inventor/christof-streck

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21

% Patents Active = 57.1

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 505(Granted Patents)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2004-2016

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Areas of Expertise:

Integrated Circuits

Dielectric Interlayer

Low-K Dielectric

Copper Metallization

Fluorine Interfaces

Shallow Trench Isolation

ALD Techniques

Strain Engineering

Silicide Formation

Epitaxial Layer

Metallization Structures

Particle Bombardment

21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9443723 - Integrated circuits with an insultating layer and methods for producing such integrated circuits (2016-09-13),

2. 8772178 - Technique for forming a dielectric interlayer above a structure including closely spaced lines (2014-07-08),

3. 8741787 - Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment (2014-06-03),

4. 8609555 - Increased stability of a complex material stack in a semiconductor device by providing fluorine enriched interfaces (2013-12-17),

5. 8569143 - Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI) (2013-10-29),

6. 8432035 - Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices (2013-04-30),

7. 8384217 - Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride (2013-02-26),

8. 8222135 - Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride (2012-07-17),

9. 8124532 - Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer (2012-02-28),

10. 8105943 - Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques (2012-01-31),

11. 8084354 - Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices (2011-12-27),

12. 7829460 - Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride (2010-11-09),

13. 7687398 - Technique for forming nickel silicide by depositing nickel from a gaseous precursor (2010-03-30),

14. 7638428 - Semiconductor structure and method of forming the same (2009-12-29),

15. 7595269 - Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer (2009-09-29),

Title: **Christof Streck: Innovator in Integrated Circuit Technologies**

Introduction

Christof Streck, based in Coswig, Germany, is a notable inventor in the field of integrated circuits, holding a remarkable 21 patents. His contributions to semiconductor technology have significantly advanced the methodologies used in circuit design and production, making him a prominent figure in the industry.

Latest Patents

Among his latest innovations, one key patent involves the development of integrated circuits featuring an insulating layer and methods for their production. This technique includes forming an insulating layer over a substrate, composed of a first composition that integrates silicon oxide and a porogen. The porogen is subsequently removed, yielding a second composition characterized by a lower dielectric constant than the initial composition. Streck's work emphasizes modifying the insulating material's properties to achieve desired mechanical characteristics, showcasing his focus on enhancing reliability and performance in circuit design.

Another significant patent involves a novel technique for forming a dielectric interlayer above structures with closely spaced lines. This method employs the deposition of silicon dioxide interlayer dielectrics through SACVD or HDP-CVD techniques, effectively preventing void formation even at tight line spaces of approximately 200 nm or less. By utilizing well-established plasma-enhanced CVD techniques, this approach aims to optimize production yield and maintain cost efficiency, further demonstrating Streck's innovative mindset.

Career Highlights

Christof Streck has contributed his expertise to various esteemed companies, including Globalfoundries Inc. and Advanced Micro Devices Corporation. His roles in these organizations have allowed him to refine the capabilities of integrated circuit technologies, vastly impacting modern electronics.

Collaborations

Throughout his career, Streck has collaborated with notable colleagues such as Volker Kahlert and Hartmut Ruelke. These partnerships have fostered the exchange of innovative ideas and technologies, strengthening the advancements in the semiconductor field and promoting a collaborative approach to solving complex challenges.

Conclusion

Christof Streck stands out as a pioneer in the realm of integrated circuit technologies. His 21 patents reflect a profound dedication to innovation and excellence in the semiconductor industry. Through his latest advancements, collaborative efforts, and professional experiences, Streck continues to influence the trajectory of technology, ensuring a legacy of progress in integrated circuits for future generations.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]