The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2013

Filed:

Nov. 16, 2011
Applicants:

Volker Kahlert, Dresden, DE;

Christof Streck, Coswig, DE;

Inventors:

Volker Kahlert, Dresden, DE;

Christof Streck, Coswig, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. In one embodiment, a semiconductor device is provided that includes a metallization system formed above a substrate. The metallization system includes a metal line formed in a dielectric layer and having a top surface. The metallization system also includes a conductive cap layer formed on the top surface. A via extends through the conductive cap layer and connects to the top surface of the metal line. A conductive barrier layer is formed on sidewalls of the via. An interface layer is formed of a noble metal between the conductive cap layer and the conductive barrier layer and between the top surface of the metal line and the conductive barrier layer.


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