Company Filing History:

18 out of 12,890

Advanced Micro Devices Corporation

Years Active: 2003-2013

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25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8432035 - Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices (2013-04-30),

2. 8384217 - Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride (2013-02-26),

3. 8222135 - Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride (2012-07-17),

4. 8211795 - Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment (2012-07-03),

5. 8124532 - Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer (2012-02-28),

6. 8105943 - Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques (2012-01-31),

7. 8084354 - Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices (2011-12-27),

8. 7867917 - Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity (2011-01-11),

9. 7829460 - Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride (2010-11-09),

10. 7687398 - Technique for forming nickel silicide by depositing nickel from a gaseous precursor (2010-03-30),

11. 7678699 - Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction (2010-03-16),

12. 7638428 - Semiconductor structure and method of forming the same (2009-12-29),

13. 7595269 - Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer (2009-09-29),

14. 7544551 - Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radius (2009-06-09),

15. 7491638 - Method of forming an insulating capping layer for a copper metallization layer (2009-02-17),

Title: Innovations and Contributions of Volker Kahlert in Semiconductor Technology

Introduction: Volker Kahlert, a notable inventor based in Dresden, Germany, has made significant contributions to the field of semiconductor technology, amassing an impressive portfolio of 25 patents. His work focuses on enhancing the reliability and efficiency of semiconductor devices, particularly through innovative metallization systems.

Latest Patents: Among his latest patents, Kahlert has developed a *metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices*. This invention addresses the challenges of material deterioration during fabrication, introducing a noble metal on exposed surfaces to improve the longevity and reliability of conductive cap layers. Another notable patent is related to *increasing the reliability of copper-based metallization structures in a microstructure device by using aluminum nitride*. This technology enhances the interface characteristics of copper-based layers while maintaining low permittivity in the layer stack.

Career Highlights: Throughout his career, Kahlert has been associated with prominent companies in the semiconductor industry, including Advanced Micro Devices Corporation and Globalfoundries Inc. His experience in these organizations has profoundly influenced his innovative approaches to semiconductor design and fabrication.

Collaborations: Volker Kahlert has collaborated with talented professionals in the industry, including Christof Streck and Joerg Hohage. Their collective expertise has contributed to the advancement of semiconductor technologies and has fostered innovative solutions within their projects.

Conclusion: Volker Kahlert's contributions to semiconductor technology reflect his dedication and expertise in the field. With 25 patents to his name, his ongoing innovations continue to shape the future of semiconductor devices, making them more reliable and efficient for various applications.

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