Advanced Micro Devices Corporation

Globalfoundries Inc.

Volker Kahlert

Christof Streck

Joerg Hohage

Matthias Lehr

Alexander Hanke

Frank Koschinsky

Michael Friedemann

Peter H&uuml;bler

Kai Frohberg

John A Iacoponi

Hartmut Ruelke

Patrick Press

Eckhard Langer

Katja Huy

Peter Huebler

Ulrich Mayer

During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. In one embodiment, a semiconductor device is provided that includes a metallization system formed above a substrate. The metallization system includes a metal line formed in a dielectric layer and having a top surface. The metallization system also includes a conductive cap layer formed on the top surface. A via extends through the conductive cap layer and connects to the top surface of the metal line. A conductive barrier layer is formed on sidewalls of the via. An interface layer is formed of a noble metal between the conductive cap layer and the conductive barrier layer and between the top surface of the metal line and the conductive barrier layer.

Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices

By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.

Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride

A new technique is disclosed in which a barrier/cap layer for a copper based metal line is formed by using a thermal-chemical treatment based on hydrogen with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma based deposition of silicon based dielectric barrier material. The thermal-chemical cleaning process is performed in the absence of any plasma ambient.

Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment

By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The tin and nickel-containing copper alloy may be formed in a gaseous ambient on the basis of tin hydride and nickel, carbon monoxide in a thermally driven reaction.

Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer

During the patterning of sophisticated metallization systems, a damaged surface portion of a sensitive low-k dielectric material may be efficiently replaced by a well-controlled dielectric material, thereby enabling an adaptation of the material characteristics and/or the layer thickness of the replacement material. Thus, established lithography and etch techniques may be used in combination with reduced critical dimensions and dielectric materials of even further reduced permittivity.

Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques

During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. Hence, well-established wet chemical etch chemistries may be used while not unduly contributing to process complexity.

Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices

By providing a barrier layer stack including a thin SiCN layer for enhanced adhesion, a silicon nitride layer for confining a copper-based metal region (thereby also effectively avoiding any diffusion of oxygen and moisture into the copper region), and a SiCN layer, the total relative permittivity may still be maintained at a low level, since the thickness of the first SiCN layer and of the silicon nitride layer may be moderately thin, while the relatively thick silicon carbide nitride layer provides the required high etch selectivity during a subsequent patterning process of the low-k dielectric layer.

Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity

Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride

Nickel silicide is formed on the basis of a gaseous precursor, such as nickel tetra carbonyl, wherein the equilibrium of the decomposition of this gas may be controlled to obtain a highly selective nickel silicide formation rate. Moreover, any etch step for removing excess nickel may be avoided, since only minute amounts of nickel may form on exposed surfaces, which may then be effectively removed by correspondingly shifting the equilibrium. Consequently, reduced process complexity, enhanced controllability and enhanced tool lifetime may be obtained.

Technique for forming nickel silicide by depositing nickel from a gaseous precursor

A new technique is disclosed in which a barrier/capping layer for a copper-based metal line is formed by using a thermal-chemical treatment with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma-based deposition of silicon nitride and/or silicon carbon nitride. The thermal-chemical treatment is performed on the basis of an ammonium/nitrogen mixture in the absence of any plasma ambient.

Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction

A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material. A recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver.

Semiconductor structure and method of forming the same

By incorporating an atomic species of increased covalent radius, which may at least partially substitute germanium, a highly efficient strain mechanism may be provided, in which the risk of stress relief due to germanium conglomeration and lattice defects may be reduced. The atomic species of increased radius, such as tin, may be readily incorporated by epitaxial growth techniques on the basis of tin hydride.

Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radius

A new technique is disclosed in which a barrier/capping layer for a copper-based metal line is formed by using a thermal-chemical treatment followed by an in situ plasma-based deposition of silicon nitride and/or silicon carbon nitride. The thermal-chemical treatment is performed on the basis of an ammonium/nitrogen mixture in the absence of any plasma ambient.

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Dresden, Germany

Volker Kahlert