The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Mar. 16, 2005
Applicants:
Hartmut Ruelke, Dresden, DE;
Christof Streck, Coswig, DE;
Kai Frohberg, Meissen, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
By depositing the lower portion of a silicon dioxide interlayer dielectric by means of SACVD or HDP-CVD techniques, the generation of voids may be reliably avoided even for devices having spaces between closely spaced lines on the order of 200 nm or less. Moreover, the bulk silicon dioxide material is deposited by well-established plasma enhanced CVD techniques, thereby providing the potential for using well-established process recipes for the subsequent CMP process, so that production yield and cost of ownership may be maintained at a low level.