The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2010

Filed:

Apr. 29, 2004
Applicants:

Hartmut Ruelke, Dresden, DE;

Katja Huy, Dresden, DE;

Karla Romero, Dresden, DE;

Inventors:

Hartmut Ruelke, Dresden, DE;

Katja Huy, Dresden, DE;

Karla Romero, Dresden, DE;

Assignee:

Globalfoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a silicon dioxide cap layer for a carbon hard mask layer for patterning of polysilicon line features having critical dimensions of 50 nm and less is provided. To this end, a low temperature plasma enhanced CVD process is used in which the deposition rate is maintained low to provide improved controllability of the layer thickness and, thus, of the optical characteristics of the silicon dioxide layer.


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