The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Oct. 02, 2007
Ralf Richter, Dresden, DE;
Martin Gerhardt, Dresden, DE;
Martin Mazur, Pulsnitz, DE;
Joerg Hohage, Dresden, DE;
Ralf Richter, Dresden, DE;
Martin Gerhardt, Dresden, DE;
Martin Mazur, Pulsnitz, DE;
Joerg Hohage, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By forming an additional stressed dielectric material after patterning dielectric liners of different intrinsic stress, a significant increase of performance in transistors may be obtained while substantially not contributing to patterning non-uniformities during the formation of respective contact openings in highly scaled semiconductor devices. The additional dielectric layer may be provided with any type of intrinsic stress, irrespective of the previously selected patterning sequence.