Company Filing History:

9 out of 5,671

Globalfoundries Inc.

patents

8 out of 12,867

Advanced Micro Devices Corporation

patents

Years Active: 2003-2018

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17 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9972634 - Semiconductor device comprising a floating gate flash memory device (2018-05-15),

2. 9372392 - Reticles for use in forming implant masking layers and methods of forming implant masking layers (2016-06-21),

3. 9281200 - Enhanced patterning uniformity of gate electrodes of a semiconductor device by late gate doping (2016-03-08),

4. 8927407 - Method of forming self-aligned contacts for a semiconductor device (2015-01-06),

5. 8802360 - Reticles for use in forming implant masking layers and methods of forming implant masking layers (2014-08-12),

6. 8716120 - High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technology (2014-05-06),

7. 8258062 - Cap layer removal in a high-K metal gate stack by using an etch process (2012-09-04),

8. 7994059 - Enhanced stress transfer in an interlayer dielectric by using an additional stress layer above a dual stress liner in a semiconductor device (2011-08-09),

9. 7981740 - Enhanced cap layer integrity in a high-K metal gate stack by using a hard mask for offset spacer patterning (2011-07-19),

10. 7938973 - Arc layer having a reduced flaking tendency and a method of manufacturing the same (2011-05-10),

11. 7887978 - Method of detecting repeating defects in lithography masks on the basis of test substrates exposed under varying conditions (2011-02-15),

12. 7550396 - Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device (2009-06-23),

13. 7547561 - Advanced process control model incorporating a target offset term (2009-06-16),

14. 7314793 - Technique for controlling mechanical stress in a channel region by spacer removal (2008-01-01),

15. 6936383 - Method of defining the dimensions of circuit elements by using spacer deposition techniques (2005-08-30),

Title: Martin Mazur: Innovator in Semiconductor Technology

Introduction

Martin Mazur is a prominent inventor based in Pulsnitz, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work has advanced the development of innovative devices and manufacturing methods in the semiconductor industry.

Latest Patents

Among his latest patents is a semiconductor device comprising a floating gate flash memory device. This patent details a method of manufacturing a semiconductor device that includes providing a silicon-on-insulator (SOI) substrate. The process involves forming a first transistor device in a logic area of the SOI substrate and creating a dielectric layer on the exposed semiconductor bulk substrate. Another notable patent involves reticles for use in forming implant masking layers. This patent describes a reticle with a center arrangement of exposure patterns and methods for exposing photoresist material above functional and incomplete die.

Career Highlights

Martin Mazur has worked with leading companies in the semiconductor industry, including Globalfoundries Inc. and Advanced Micro Devices Corporation. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Throughout his career, Martin has collaborated with notable professionals in the field, including Ralf Richter and Joerg Hohage. These collaborations have fostered innovation and have been instrumental in the development of new technologies.

Conclusion

Martin Mazur's contributions to semiconductor technology through his numerous patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the future of semiconductor devices and manufacturing processes.

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