The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
May. 01, 2007
Kai Frohberg, Niederau, DE;
Volker Grimm, Langebrueck, DE;
Sven Mueller, Wiednitz, DE;
Matthias Lehr, Dresden, DE;
Ralf Richter, Dresden, DE;
Jochen Klais, Radebeul, DE;
Martin Mazur, Dresden, DE;
Heike Salz, Radebeul, DE;
Joerg Hohage, Dresden, DE;
Matthias Schaller, Dresden, DE;
Kai Frohberg, Niederau, DE;
Volker Grimm, Langebrueck, DE;
Sven Mueller, Wiednitz, DE;
Matthias Lehr, Dresden, DE;
Ralf Richter, Dresden, DE;
Jochen Klais, Radebeul, DE;
Martin Mazur, Dresden, DE;
Heike Salz, Radebeul, DE;
Joerg Hohage, Dresden, DE;
Matthias Schaller, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By performing a plasma treatment for efficiently sealing the surface of a stressed dielectric layer containing silicon nitride, an enhanced performance during the patterning of contact openings may be achieved, since nitrogen-induced resist poisoning may be significantly reduced during the selective patterning of stressed layers of different types of intrinsic stress.