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Heike Salz

USPTO Granted Patents = 12 (Patent Applications = 1)

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 518(Granted Patents)

Location History:

Dresden, DE (2010 - 2013)
Radebeul, DE (2008 - 2015)

Company Filing History:

9 out of 12,883

Advanced Micro Devices Corporation

Years Active: 2008-2015

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9006114 - Method for selectively removing a spacer in a dual stress liner approach (2015-04-14),

2. 8390127 - Contact trenches for enhancing stress transfer in closely spaced transistors (2013-03-05),

3. 8338314 - Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors (2012-12-25),

4. 8034726 - Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials (2011-10-11),

5. 7883629 - Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies (2011-02-08),

6. 7763507 - Stressed interlayer dielectric with reduced probability for void generation in a semiconductor device by using an intermediate etch control layer of increased thickness (2010-07-27),

7. 7700377 - Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device (2010-04-20),

8. 7678690 - Semiconductor device comprising a contact structure with increased etch selectivity (2010-03-16),

9. 7608501 - Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress (2009-10-27),

10. 7550396 - Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device (2009-06-23),

11. 7482219 - Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer (2009-01-27),

12. 7416973 - Method of increasing the etch selectivity in a contact structure of semiconductor devices (2008-08-26),

Title: The Innovative Mind of Heike Salz

Introduction

Heike Salz is an accomplished inventor based in Radebeul, Germany, known for her pioneering work in semiconductor technology. With a total of 12 patents to her name, Salz has made significant contributions to the field, particularly in enhancing the performance of transistors through innovative methods.

Latest Patents

Heike Salz's latest patents showcase her technological ingenuity. One notable patent is the "Method for selectively removing a spacer in a dual stress liner approach." This invention integrates a spacer removal process into the patterning sequence for a first stress-inducing material, allowing for the maintenance of the sidewall spacer structure for certain transistors without the need for additional lithography steps. Another essential patent is "Contact trenches for enhancing stress transfer in closely spaced transistors." This innovation improves the scalability of strain-inducing mechanisms by forming a single stress-inducing layer with contact trenches, effectively shielding unwanted stress components while providing beneficial strain in the transistor width direction.

Career Highlights

Throughout her career, Heike Salz has held key positions in notable companies in the semiconductor industry. She has worked with Advanced Micro Devices Corporation, where she contributed to groundbreaking developments in chip technology. Additionally, Salz has been associated with Globalfoundries Inc., further solidifying her role as a leader in her field.

Collaborations

In her professional journey, Heike has collaborated with eminent colleagues such as Ralf Richter and Matthias Schaller. Their combined expertise has contributed to the advancement of innovative semiconductor solutions and the successful execution of various projects.

Conclusion

Heike Salz's contributions to the semiconductor industry exemplify her talent and dedication as an inventor. With a remarkable portfolio of patents and significant collaborations, she continues to push the boundaries of innovation in the field, making a lasting impact on technology and the future of transistors.

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