The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Jun. 15, 2006
Applicants:
Kai Frohberg, Niederau, DE;
Carsten Peters, Dresden, DE;
Matthias Schaller, Dresden, DE;
Heike Salz, Radebeul, DE;
Inventors:
Kai Frohberg, Niederau, DE;
Carsten Peters, Dresden, DE;
Matthias Schaller, Dresden, DE;
Heike Salz, Radebeul, DE;
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a technique for forming differently stressed contact etch stop layers, wherein sidewall spacers are removed prior to the formation of the contact etch stop layers. During the partial removal of respective contact etch stop layers, a corresponding etch stop layer regime is used to substantially avoid any unwanted stress-inducing material residuals, thereby significantly enhancing the stress transfer mechanism.