The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Jun. 22, 2006
Applicants:
Kai Frohberg, Niederau, DE;
Carsten Peters, Dresden, DE;
Matthias Schaller, Dresden, DE;
Heike Salz, Radebeul, DE;
Inventors:
Kai Frohberg, Niederau, DE;
Carsten Peters, Dresden, DE;
Matthias Schaller, Dresden, DE;
Heike Salz, Radebeul, DE;
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
By partially removing an etch stop layer prior to the formation of a first contact etch stop layer, a superior stress transfer mechanism may be provided in an integration scheme for generating strain by means of contact etch stop layers. Thus, a semiconductor device having different types of transistors may be provided, in which a high degree of metal silicide integrity as well as a highly efficient stress transfer mechanism is achieved.