The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9281200 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 08, 2016

Filed:

Jul. 25, 2011
Applicants:

Hans-juergen Thees, Dresden, DE;

Sven Beyer, Dresden, DE;

Martin Mazur, Pulsnitz, DE;

Steffen Laufer, Dresden, DE;

Inventors:

Hans-Juergen Thees, Dresden, DE;

Sven Beyer, Dresden, DE;

Martin Mazur, Pulsnitz, DE;

Steffen Laufer, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/265 (2006.01); H01L 21/8234 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28123 (2013.01); H01L 21/265 (2013.01); H01L 21/28035 (2013.01); H01L 21/82345 (2013.01); H01L 21/823842 (2013.01); H01L 29/4916 (2013.01);
Abstract

When forming sophisticated semiconductor-based gate electrode structures of transistors, the pre-doping of one type of gate electrode structure may be accomplished after the actual patterning of the electrode material by using an appropriate mask or fill material for covering the active regions and using a lithography mask. In this manner, a high degree of flexibility is provided with respect to selecting an appropriate patterning regime, while at the same time a uniform and superior cross-sectional shape for any type of gate electrode structure is obtained.


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