The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Jan. 31, 2005
Kai Frohberg, Meissen, DE;
Matthias Schaller, Dresden, DE;
Massud Aminpur, Dresden, DE;
Martin Mazur, Pulsnitz, DE;
Roberto Klingler, Dresden, DE;
Kai Frohberg, Meissen, DE;
Matthias Schaller, Dresden, DE;
Massud Aminpur, Dresden, DE;
Martin Mazur, Pulsnitz, DE;
Roberto Klingler, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
During the formation of a transistor element, sidewalls spacers are removed or at least partially etched back after ion implantation and silicidation, thereby rendering the mechanical coupling of a contact etch stop layer to the underlying drain and source regions more effective. Hence, the mechanical stress may be substantially induced by the contact etch step layer rather than by a combination of the spacer elements and the etch stop layer, thereby significantly facilitating the stress engineering in the channel region. By additionally performing a plasma treatment, different amounts of stress may be created in different transistor devices without unduly contributing to process complexity.