The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 23, 2010
Markus Lenski, Dresden, DE;
Kerstin Ruttloff, Hainichen, DE;
Martin Mazur, Pulsnitz, DE;
Frank Seliger, Dresden, DE;
Ralf Otterbach, Dresden, DE;
Markus Lenski, Dresden, DE;
Kerstin Ruttloff, Hainichen, DE;
Martin Mazur, Pulsnitz, DE;
Frank Seliger, Dresden, DE;
Ralf Otterbach, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
When forming transistor elements on the basis of sophisticated high-k metal gate structures, the efficiency of a replacement gate approach may be enhanced by more efficiently adjusting the gate height of transistors of different conductivity type when the dielectric cap layers of transistors may have experienced a different process history and may thus require a subsequent adaptation of the final cap layer thickness in one type of the transistors. For this purpose, a hard mask material may be used during a process sequence for forming offset spacer elements in one gate electrode structure while covering another gate electrode structure.