The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
May. 18, 2007
Applicants:
Tobias Letz, Dresden, DE;
Matthias Lehr, Dresden, DE;
Joerg Hohage, Dresden, DE;
Frank Kuechenmeister, Dresden, DE;
Inventors:
Tobias Letz, Dresden, DE;
Matthias Lehr, Dresden, DE;
Joerg Hohage, Dresden, DE;
Frank Kuechenmeister, Dresden, DE;
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C12Q 1/70 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 24/12 (2013.01); H01L 2924/01073 (2013.01); H01L 2224/13099 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/30105 (2013.01); H01L 2924/01033 (2013.01); H01L 24/11 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/14 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/01019 (2013.01); H01L 2224/1147 (2013.01); H01L 2924/19041 (2013.01);
Abstract
By determining at least one surface characteristic of a passivation layer stack used for forming a bump structure, the situation after the deposition and patterning of a terminal metal layer stack may be 'simulated,' thereby providing the potential for using well-established bump manufacturing techniques while nevertheless significantly reducing process complexity by omitting the deposition and patterning of the terminal metal layer stack.