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For the Inventor, By the Inventor

Dresden, Germany

Tobias Letz

USPTO Granted Patents = 10 

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 32(Granted Patents)


Company Filing History:

goldMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal4 out of 12,867 
 
Advanced Micro Devices Corporation
 patents

Years Active: 2010-2014

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10 patents (USPTO):
1. 8859398 - Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge (2014-10-14),
2. 8841140 - Technique for forming a passivation layer without a terminal metal (2014-09-23),
3. 8673087 - Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device (2014-03-18),
4. 8426312 - Method of reducing contamination by providing an etch stop layer at the substrate edge (2013-04-23),
5. 8323989 - Test system and method of reducing damage in seed layers in metallization systems of semiconductor devices (2012-12-04),
6. 8193086 - Local silicidation of via bottoms in metallization systems of semiconductor devices (2012-06-05),
7. 7924569 - Semiconductor device comprising an in-chip active heat transfer system (2011-04-12),
8. 7879709 - Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure (2011-02-01),
9. 7820536 - Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer (2010-10-26),
10. 7781343 - Semiconductor substrate having a protection layer at the substrate back side (2010-08-24),

Title: The Innovative Contributions of Tobias Letz

Introduction

Tobias Letz is a prominent inventor based in Dresden, Germany, known for his significant contributions to the field of semiconductor technology. With a total of 10 patents to his name, Letz has made remarkable advancements that enhance the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents focuses on enhancing the adhesion of interlayer dielectric materials in semiconductor devices by suppressing silicide formation at the substrate edge. This innovation allows for improved adhesion of dielectric layer stacks by avoiding the formation of metal silicide in the edge region of the substrate. A dielectric protection layer can be selectively formed in the edge region prior to a pre-clean process or immediately before the deposition of refractory metal. This method efficiently removes non-reacted metal from the edge region, allowing further processing to continue under enhanced conditions for forming interlayer dielectric materials. Another notable patent involves a technique for forming a passivation layer without a terminal metal. By simulating the surface characteristics of a passivation layer stack used for bump structures, this approach significantly reduces process complexity by omitting the deposition and patterning of the terminal metal layer stack.

Career Highlights

Throughout his career, Tobias Letz has worked with leading companies in the semiconductor industry, including GlobalFoundries Inc. and Advanced Micro Devices Corporation. His expertise and innovative mindset have contributed to the development of cutting-edge technologies in these organizations.

Collaborations

Letz has collaborated with notable professionals in the field, including Frank Feustel and Holger S. Schuehrer. These collaborations have further enriched his work and expanded the impact of his inventions.

Conclusion

Tobias Letz's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor device manufacturing and performance.

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