Globalfoundries Inc.

Advanced Micro Devices Corporation

Tobias Letz

Frank Feustel

Holger S Schuehrer

Frank Koschinsky

Ralf Richter

Kai Frohberg

Matthias Lehr

Frank G Kuechenmeister

Joerg Hohage

Carsten Peters

Markus Nopper

Andreas Ott

Christin Bartsch

Adhesion of dielectric layer stacks to be formed after completing the basic configuration of transistor elements may be increased by avoiding the formation of a metal silicide in the edge region of the substrate. For this purpose, a dielectric protection layer may be selectively formed in the edge region prior to a corresponding pre-clean process or immediately prior to deposition of the refractory metal. Hence, non-reacted metal may be efficiently removed from the edge region without creating a non-desired metal silicide. Hence, the further processing may be continued on the basis of enhanced process conditions for forming interlayer dielectric materials.

Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge

By determining at least one surface characteristic of a passivation layer stack used for forming a bump structure, the situation after the deposition and patterning of a terminal metal layer stack may be 'simulated,' thereby providing the potential for using well-established bump manufacturing techniques while nevertheless significantly reducing process complexity by omitting the deposition and patterning of the terminal metal layer stack.

Technique for forming a passivation layer without a terminal metal

A method for treating a semiconductor device includes dissolving an inert gas species in a wet chemical cleaning solution and treating a material layer of a semiconductor device with the wet chemical cleaning solution in ambient atmosphere. The inert gas species is oversaturated in the wet chemical cleaning solution in the ambient atmosphere.

Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device

By providing an etch stop layer selectively at the bevel, at least one additional wet chemical bevel etch process may be performed prior to or during the formation of a metallization layer without affecting the substrate material. Hence, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. The etch stop layer may be formed at an early manufacturing stage so that a bevel etch process may be performed at any desired stage of the formation of circuit elements.

Method of reducing contamination by providing an etch stop layer at the substrate edge

During the formation of a complex metallization system, the influence of a manufacturing environment on sensitive barrier/seed material systems may be monitored or controlled by using an appropriate test pattern and applying an appropriate test strategy. For example, actual probe and reference substrates may be prepared and may be processed with and without exposure to the manufacturing environment of interest, thereby enabling an efficient evaluation of one or more parameters of the environment. Furthermore, an 'optimized' manufacturing environment may be obtained on the basis of the test strategy disclosed herein.

Test system and method of reducing damage in seed layers in metallization systems of semiconductor devices

Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.

Local silicidation of via bottoms in metallization systems of semiconductor devices

By providing thermoelectric elements, such as Peltier elements, in a semiconductor device, the overall heat management may be increased. In some illustrative embodiments, the corresponding active cooling/heating systems may be used in a stacked chip configuration to establish an efficient thermally conductive path between temperature critical circuit portions and a heat sink of the stacked chip configuration.

Semiconductor device comprising an in-chip active heat transfer system

A semiconductor structure comprises a semiconductor substrate. A layer of an electrically insulating material is formed over the semiconductor substrate. An electrically conductive feature is formed in the layer of electrically insulating material. A first layer of a semiconductor material is formed between the electrically conductive feature and the layer of electrically insulating material.

Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure

By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently removed on the basis of a heat treatment so as to initiate material removal by evaporation.

Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer

By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.

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Dresden, Germany

Tobias Letz