Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 59(Granted Patents)

Location History:

Dresden, DE (2005 - 2008)
Langebrueck/Dresden, DE (2010)
Langebruck/Dresden, DE (2011)
Dresden-Langebrueck, DE (2017)

Company Filing History:

12 out of 14,705

Infineon Technologies Ag

patents

4 out of 37

Infineon Technologies Flash Gmbh & Co. Kg

Infineon Technology Ag

where one patent can have more than one assignee

Years Active: 2005-2017

where 'Filed Patents' based on already Granted Patents

16 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9613181 - Semiconductor device structure including active region having an extension portion (2017-04-04),

2. 8021933 - Integrated circuit including structures arranged at different densities and method of forming the same (2011-09-20),

3. 7733698 - Memory device, a non-volatile semiconductor memory device and a method of forming a memory device (2010-06-08),

4. 7411837 - Method for operating an electrical writable and erasable memory cell and a memory device for electrical memories (2008-08-12),

5. 7405441 - Semiconductor memory (2008-07-29),

6. 7323388 - SONOS memory cells and arrays and method of forming the same (2008-01-29),

7. 7323383 - Method for fabricating an NROM memory cell arrangement (2008-01-29),

8. 7274069 - Memory cell (2007-09-25),

9. 7205195 - Method for fabricating NROM memory cells with trench transistors (2007-04-17),

10. 7145807 - Method for operating an electrical writable and erasable memory cell and a memory device for electrical memories (2006-12-05),

11. 7094648 - Method for fabricating an NROM memory cell array (2006-08-22),

12. 7075137 - Semiconductor memory having charge trapping memory cells (2006-07-11),

13. 7015095 - Method for fabricating a semiconductor memory having charge trapping memory cells and semiconductor substrate (2006-03-21),

14. 7005355 - Method for fabricating semiconductor memories with charge trapping memory cells (2006-02-28),

15. 6992348 - Semiconductor memory with vertical charge-trapping memory cells and fabrication (2006-01-31),

Title: The Innovative Mind of Joachim Deppe: A Pioneer in Semiconductor Technology

Introduction

Joachim Deppe, an accomplished inventor based in Dresden, Germany, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 16 patents, Deppe’s innovations have helped shape the dimensions of modern electronics and integrated circuits.

Latest Patents

One of Deppe's latest patents encompasses a semiconductor device structure featuring an active region with an extension portion. This innovative structure allows for enhanced connectivity by incorporating a contact structure that connects both the contact regions and the dummy gate to power rails. Furthermore, his work on integrated circuits involves methods for arranging structures at varying densities, utilizing advanced lithography processes which improve the efficiency of circuit design. His developments are critical to advancing semiconductor fabrication processes.

Career Highlights

Joachim Deppe has enjoyed a successful career working for leading companies in the semiconductor industry. Notably, he has been associated with Infineon Technologies AG and Infineon Technologies Flash GmbH & Co. KG. His role in these organizations has allowed him to contribute to groundbreaking innovations and apply his expertise in research and development.

Collaborations

Throughout his career, Deppe has collaborated with esteemed colleagues such as Christoph Ludwig and Christoph Kleint. These professional relationships have fostered an environment focused on innovation and excellence within the semiconductor sector.

Conclusion

Joachim Deppe exemplifies the spirit of innovation in the semiconductor industry through his numerous patents and collaborative efforts. His work not only enhances the performance of electronic devices but also propels the industry forward, guiding its future developments. As technology continues to evolve, inventors like Deppe remain at the forefront, laying the groundwork for the next generation of semiconductors and integrated circuits.

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