The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Mar. 04, 2005
Joachim Deppe, Dresden, DE;
Christoph Ludwig, Langebrück, DE;
Christoph Kleint, Dresden, DE;
Josef Willer, Riemerling, DE;
Joachim Deppe, Dresden, DE;
Christoph Ludwig, Langebrück, DE;
Christoph Kleint, Dresden, DE;
Josef Willer, Riemerling, DE;
Infineon Technologies AG, Munich, DE;
Infineon Technologies Flash GmbH & Co. KG, Dresden, DE;
Abstract
A trench () is fabricated in a silicon body (). The walls () of the trench are provided with a nitrogen implantation (). An oxide layer between the source/drain regions () and a word line applied on the top side grows to a greater thickness than a lower oxide layer of an ONO storage layer fabricated as gate dielectric at the trench wall. Instead of the nitrogen implantation into the trench walls, it is possible to fabricate a metal silicide layer on the top sides of the source/drain regions in order to accelerate the oxide growth there.