The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Aug. 05, 2004
Applicants:
Joachim Deppe, Dresden, DE;
Christoph Kleint, Dresden, DE;
Christoph Ludwig, Langebruck, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a memory cell, in a trench, a layer sequence comprising a first oxide layer, a nitride layer provided on the first oxide layer, and a second oxide layer, facing the gate electrode, and provided at the lateral trench walls, while the nitride layer is absent in a curved region of the trench bottom. In an alternative configuration, in each case at least one step is formed at the lateral walls of the trench, preferably below the source region or the drain region, respectively.