The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Dec. 17, 2004
Joachim Deppe, Dresden, DE;
Christoph Kleint, Dresden, DE;
Christoph Ludwig, Langebrück, DE;
Infineon Technologies AG, Munich, DE;
Abstract
In the method, trenches () are etched and, in between, bit lines () are in each case arranged on doped source drain/regions (). Dopant is introduced into the bottoms of the trenches () in order to form doped regions (), in order to electrically modify the channel regions. Storage layers are applied and gate electrodes () are arranged at the trench walls. The semiconductor material at the bottoms of the trenches is etched away between the word lines () to an extent such that the doped regions () are removed there to such a large extent that a crosstalk between adjacent memory cells along the trenches is reduced.