The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

May. 22, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ricardo Pablo. Mikalo, Heideblick, DE;

Joachim Deppe, Dresden-Langebrueck, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); G06F 19/00 (2011.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
G06F 19/321 (2013.01); G06F 19/3443 (2013.01); H01L 27/088 (2013.01); H01L 27/1207 (2013.01); H01L 29/41766 (2013.01); H01L 29/7835 (2013.01);
Abstract

A semiconductor device structure includes a semiconductor substrate with an active region provided therein, a gate structure, a dummy gate structure and two contact regions provided in the active region for forming source and drain regions. The gate structure and the dummy gate structure are formed on the semiconductor substrate so as to partially overlie the active region, and one of the contact regions is located at one side of the dummy gate structure. The semiconductor device structure includes a contact structure contacting one of the contact regions and the dummy gate for connecting this contact region and the dummy gate to one of a Vdd rail and a Vss rail. The active region has an extension portion protruding laterally away from the active region relative to the other contact region, where the contact structure is located over the extension portion.


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