Hefei, China

Jie Bai

This inventor holds 25 USPTO granted patents and 7 published patent applications and 6 EPO patents, primarily in Semiconductor Manufacturing. Top assignees: Changxin Memory Technologies, Inc., Beijing Superstring Academy of Memory Technology, Beijing Superstrng Academy of Memory Technology. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jie Bai. Retrieved from https://idiyas.com/inventor/jie-bai-nte4hydh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.2

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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Areas of Expertise:
Semiconductor Structure
Manufacturing Method
Memory Fabrication
High Depth-Width Ratio
PMOS Transistor
Air Spacer Layer
High-K Dielectric Material
Peripheral Circuit
Buried Gate
Core and Peripheral Regions
25 patents (USPTO):Explore Patents

Title: Inventor Jie Bai - Revolutionizing Technology in Hefei

Introduction: Jie Bai is a visionary inventor based in Hefei, China, known for his groundbreaking contributions to the field of technology.

Latest Patents: Jie Bai holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials, showcasing his innovative spirit and dedication to pushing the boundaries of science.

Career Highlights: With a career spanning over two decades, Jie Bai has worked with leading research institutions and technology companies, where he has spearheaded projects that have led to significant advancements in various industries.

Collaborations: Jie Bai is renowned for his collaborative efforts with fellow inventors, researchers, and engineers, fostering a culture of innovation and knowledge sharing that has resulted in transformative technologies.

Conclusion: Inventor Jie Bai's relentless pursuit of innovation and his passion for creating a better future through technology make him a true pioneer in the field, inspiring the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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