The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Jun. 22, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Mengmeng Yang, Hefei, CN;

Jie Bai, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/00 (2006.01); G11C 5/06 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); G11C 5/063 (2013.01); H10B 12/0335 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

The present disclosure provides a method for manufacturing a semiconductor device and a semiconductor device. The method for manufacturing a semiconductor device includes: providing a substrate; forming a plurality of first structures extending in a first direction on the substrate; forming a sacrificial layer on sidewalls of the first structures; forming an outer spacer layer on a sidewall of the sacrificial layer; removing part of the outer spacer layer to obtain a patterned outer spacer layer that exposes part of the sacrificial layer; and removing the sacrificial layer to form air gaps between the patterned outer spacer layer and the first structures.


Find Patent Forward Citations

Yang, Mengmeng. (2024). Method for manufacturing semiconductor device and semiconductor device (U.S. Patent No. 12185525). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12185525

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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