The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jan. 06, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Wenli Zhao, Hefei, CN;

Jie Bai, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/311 (2006.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 64/68 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/31111 (2013.01); H10D 62/115 (2025.01);
Abstract

A preparation method of a semiconductor structure includes: a substrate including a groove structure is provided; a first isolation layer, a second isolation layer and a third isolation layer are sequentially formed on a bottom and sidewalls of the groove structure, where an upper surface of the first isolation layer is lower than an upper surface of the second isolation layer and an upper surface of the substrate to form a side trench; the third isolation layer is etched to enable an upper surface of the third isolation layer to be lower than the upper surface of the second isolation layer so that a top of the second isolation layer protrudes with respect to the first isolation layer and the third isolation layer to form a convex structure; and the second isolation layer is etched to remove the convex structure.


Find Patent Forward Citations

Loading…