The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Jan. 12, 2022
Changxin Memory Technologies, Inc., Anhui, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The method includes: providing a substrate including a core NMOS area, a core PMOS area and a peripheral NMOS area; performing oxidation treatment on the substrate in the core PMOS area to convert a thickness of a part of the substrate in the core PMOS area into an oxide layer; removing the oxide layer; forming a first semiconductor layer on the remaining substrate in the core PMOS area; forming a gate dielectric layer located on the first semiconductor layer and on the substrate in the core NMOS area and the peripheral NMOS area; and forming a gate on the gate dielectric layer.