The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Jun. 21, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Beijing Superstring Academy of Memory Technology, BeiJing, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
BEIJING SUPERSTRNG ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
Abstract
A semiconductor structure includes a substrate, a storage capacitor unit, a transistor, and an electrical connection structure. The storage capacitor unit is located at an array area and includes: N insulation posts, distributed in a direction parallel to a surface of the substrate; a bottom electrode layer; a top electrode layer, directly facing the bottom electrode layer; and a capacitor dielectric layer, located between the top and bottom electrode layers. One of the bottom or top electrode layers corresponding to the N insulation posts is a continuous film layer, and the other is discrete film layers. The transistor is located at a circuit area and includes a capacitor control terminal located in the substrate of the circuit area. The electrical connection structure is electrically connected to the capacitor control terminal, and extends from the circuit area to the array area to come into contact with a corresponding discrete film layer.