The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Nov. 14, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Beijing Superstring Academy of Memory Technology, Beijing, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: forming a capacitor on a substrate, where a first support layer is provided between parts of the first electrodes in the capacitor away from the substrate; removing part of a second electrode and part of a first dielectric layer to expose a surface of the first support layer away from the substrate; forming, on the surface of the first support layer away from the substrate, a second support layer having a first hole structure; forming, on a side surface of the first hole structure, a third electrode in contact with the first electrode; forming a second dielectric layer covering the third electrode and being in contact with the first dielectric layer; and forming, on a side surface of the second dielectric layer, a fourth electrode in contact with the second electrode.