The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Feb. 18, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Jie Bai, Hefei, CN;

Kang You, Hefei, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/05 (2023.02); H10B 12/50 (2023.02);
Abstract

The present disclosure relates to the technical field of semiconductor manufacturing, and provides a method of manufacturing a semiconductor structure. The method of manufacturing a semiconductor structure includes: providing a substrate; forming a mask layer on the substrate; removing a part of the mask layer on a non-array region; forming a first oxide layer on the non-array region; removing a part of the first oxide layer on a first transistor region, to expose a top surface of the first transistor region; forming an epitaxial layer on the exposed top surface of the first transistor region; removing a part of the first oxide layer on a second transistor region; and forming a second oxide layer on the second transistor region and the epitaxial layer.


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