The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Sep. 19, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Mengmeng Yang, Hefei, CN;

Jie Bai, Hefei, CN;

Deyuan Xiao, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H10B 12/31 (2023.02); G11C 5/063 (2013.01); H10B 12/0335 (2023.02); H10B 12/05 (2023.02); H10B 12/09 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); H10B 12/50 (2023.02);
Abstract

A memory includes a plurality of semiconductor structures stacked onto one another. Each of the plurality of semiconductor structures include: a first base including a peripheral circuit structure; a first integrated circuit layer disposed on the first base and electrically connected to the peripheral circuit structure; and a second base disposed on the first integrated circuit layer. A first dielectric layer is disposed between the first integrated circuit layer and the second base. The second base includes a storage circuit structure. Each of the first base and the second base includes a semiconductor layer.


Find Patent Forward Citations

Yang, Mengmeng. (2026). Memory and method for manufacturing memory (U.S. Patent No. 12526979). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12526979

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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