Jeffrey C Kalb, Jr

This inventor holds 13 USPTO granted patents. Top assignees: Intel Corporation, California Micro Devices Corp.. Active years: 1997-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeffrey C Kalb, Jr. Retrieved from https://idiyas.com/inventor/jeffrey-c-kalb-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 6

Forward Citations = 155(Granted Patents)

Location History:

Pheonix, AZ (US) (1999)
Phoenix, AZ (US) (1997 - 2001)

Company Filing History:

California Micro Devices Corp.

patents

Years Active: 1997-2001

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6307395 - Termination circuits and methods for bused and networked devices (2001-10-23),

2. 6242934 - Background leakage zeroing by temperature and voltage dependence for IDDQ measurement and defect resolution (2001-06-05),

3. 6107817 - UV methods for screening open circuit defects in CMOS integrated circuits (2000-08-22),

4. 6100713 - Termination circuits and methods for memory buses and devices (2000-08-08),

5. 6008665 - Termination circuits and methods therefor (1999-12-28),

6. 5986461 - UV methods for screening open circuit defects in CMOS integrated circuits (1999-11-16),

7. 5889409 - Leakage tracking device sample for IDDQ measurement and defect resolution (1999-03-30),

8. 5869977 - Defect insertion testability mode for IDDQ testing methods (1999-02-09),

9. 5801533 - Method and apparatus with cascode biasing magneto field effect (1998-09-01),

10. 5760581 - Method and apparatus coupling together magneto field effect transistors (1998-06-02),

11. 5757055 - Triple drain magneto field effect transistor with high conductivity (1998-05-26),

12. 5742177 - Method for testing a semiconductor device by measuring quiescent (1998-04-21),

13. 5627789 - Sense amplifier circuitry for differential semiconductor memories (1997-05-06),

Title: The Innovative Contributions of Jeffrey C Kalb, Jr.

Introduction

Jeffrey C Kalb, Jr. is a notable inventor based in Phoenix, AZ (US), recognized for his significant contributions to the field of electronics and semiconductor technology. With a total of 13 patents to his name, Kalb has made strides in developing advanced circuits and methods that enhance the performance of electronic devices.

Latest Patents

One of Kalb's latest patents is focused on termination circuits and methods for bused and networked devices. This invention introduces an active termination circuit designed to effectively terminate a transmission line in devices that may include multiple components. The circuit is engineered to clamp the voltage level on the transmission line to either a first or second reference voltage level, utilizing clamping transistors to maintain optimal performance. Another significant patent addresses background leakage zeroing by temperature and voltage dependence for IDDQ measurement and defect resolution. This method innovatively detects defects in semiconductor devices through IDDQ testing techniques, independent of background leakage current, thereby improving defect determination accuracy.

Career Highlights

Throughout his career, Kalb has worked with prominent companies such as Intel Corporation and California Micro Devices Corp. His experience in these leading organizations has undoubtedly contributed to his expertise and innovative capabilities in the field of electronics.

Collaborations

Kalb has collaborated with notable individuals in the industry, including Jeffrey C Kalb and John C Jorgensen. These partnerships have likely fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Jeffrey C Kalb, Jr. stands out as a significant figure in the realm of innovation, particularly in electronics and semiconductor technology. His patents reflect a commitment to advancing the field and addressing critical challenges in device performance.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]