The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1998
Filed:
Sep. 17, 1996
Jeffrey C Kalb, Jr, Phoenix, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Cascode coupled magnetic field effect transistors used to measure magnetic field. The disclosed cascode coupled MagFET circuit includes cascode coupled transistors used to equalize the voltage at the drains of the MagFET resulting in a differential Hall current. The cascode devices are biased at a state of very weak inversion to maximize input impedance. The differential currents are amplified with an active current mirror load coupled to the cascode configured devices. A comparator is used to sense the differential currents. The reference voltages used to bias the MagFET and the cascode coupled devices are generated with a bias network including a MagFET precisely matched with the MagFET used to measure the magnetic field such that the magnetic field measuring circuit is exceptionally immune to variations in process, temperature and supply voltage.