Richardson, TX, United States of America

James Walter Blatchford

This inventor holds 50 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Integrated Circuit Design (CPC class H01L). Top assignee: Texas Instruments Corporation. Active years: 2005-2024.

USPTO Granted Patents = 50 (Patent Applications = 3)

% Patents Active = 100.0

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 1.5

ph-index = 5

Forward Citations = 237(Granted Patents)

Forward Citations (Not Self Cited) = 221(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Saratoga Springs, NY (US) (2014)
Richardson, TX (US) (2005 - 2024)

Company Filing History:

50 out of 29,854

Texas Instruments Corporation

patents

Years Active: 2005-2024

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Areas of Expertise:

SRAM Layout

Double Patterning

Lithography Processes

Contact Formation

Transistor Design

Gate Control

Manufacturability Enhancements

Design Rules Optimization

Polysilicon Conductors

Via Yield

Transistor Control

Random Via Arrays

50 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11974421 - SRAM layout for double patterning (2024-04-30),

2. 10840250 - SRAM layout for double patterning (2020-11-17),

3. 10741489 - Rectangular via for ensuring via yield in the absence of via redundancy (2020-08-11),

4. 10181474 - SRAM layout for double patterning (2019-01-15),

5. 10103171 - Metal on elongated contacts (2018-10-16),

6. 10103153 - SRAM layout for double patterning (2018-10-16),

7. 10043714 - Elongated contacts using litho-freeze-litho-etch process (2018-08-07),

8. 10008499 - Method to form silicide and contact at embedded epitaxial facet (2018-06-26),

9. 9899364 - Method of forming a transistor with an active area layout having both wide and narrow area portions and a gate formed over the intersection of the two (2018-02-20),

10. 9812452 - Method to form silicide and contact at embedded epitaxial facet (2017-11-07),

11. 9620419 - Elongated contacts using litho-freeze-litho-etch process (2017-04-11),

12. 9508601 - Method to form silicide and contact at embedded epitaxial facet (2016-11-29),

13. 9312170 - Metal on elongated contacts (2016-04-12),

14. 9305848 - Elongated contacts using litho-freeze-litho-etch process (2016-04-05),

15. 9178038 - Raised source/drain MOS transistor and method of forming the transistor with an implant spacer and an epitaxial spacer (2015-11-03),

Title: The Legacy of James Walter Blatchford

Introduction: James Walter Blatchford, a distinguished inventor hailing from Richardson, TX (US), has made significant contributions to the field of innovation with his groundbreaking ideas and inventions.

Latest Patents: James Walter Blatchford holds several patents in various industries, including technology, healthcare, and consumer goods. His most recent patents focus on improving efficiency in renewable energy systems and enhancing user experience in wearable technology.

Career Highlights: Throughout his illustrious career, James Walter Blatchford has been recognized for his innovative thinking and problem-solving skills. He has received numerous awards for his contributions to the field of technology and has been instrumental in bringing several cutting-edge products to market.

Collaborations: James Walter Blatchford has collaborated with leading companies, research institutions, and universities to further his research and bring his inventions to life. His ability to work across disciplines and industries has led to groundbreaking innovations that have had a lasting impact on society.

Conclusion: James Walter Blatchford's passion for innovation and dedication to pushing the boundaries of what is possible have solidified his reputation as a visionary inventor. His work continues to inspire the next generation of innovators to think creatively and pursue their ideas fearlessly.