The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Dec. 17, 2014
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

James Walter Blatchford, Richardson, TX (US);

Scott William Jessen, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/768 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 21/283 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/283 (2013.01); H01L 21/28008 (2013.01); H01L 21/76802 (2013.01); H01L 21/823871 (2013.01); H01L 23/485 (2013.01); H01L 27/092 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, and including elongated contacts which connect to exactly two active areas and/or MOS gates and directly connect to a first level interconnect. A process of forming an integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, using exactly two contact photolithographic exposure operations, and including elongated contacts which connect to exactly two active areas and/or MOS gates and directly connect to a first level interconnect.


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