Tempe, AZ, United States of America

James Albert Kirchgessner

This inventor holds 29 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Devices. Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc., Motorola Corporation. Active years: 1989-2026.

USPTO Granted Patents = 29 

% Patents Active = 86.2

Average Co-Inventor Count = 2.6

ph-index = 6

Forward Citations = 81(Granted Patents)


Location History:

  • Mesa, AZ (US) (1989 - 1990)
  • Austin, TX (US) (2017 - 2019)
  • Tempe, AZ (US) (1992 - 2023)

Company Filing History:


Years Active: 1989-2026

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Areas of Expertise:
Semiconductor Device
Bipolar Transistor
Monocrystalline Base
Tunable Inductors
Silicided Structure
Integrated CMOS
High Frequency Devices
Counter-Doped Varactor
Dielectric Ledge
Conductivity Doped Base
Recessed Base Electrode
Heterojunction BiCMOS
29 patents (USPTO):Explore Patents

Title: James Albert Kirchgessner: Innovator in Semiconductor Technology

Introduction

James Albert Kirchgessner, a prominent inventor based in Tempe, AZ, is known for his significant contributions to semiconductor technology, holding an impressive 25 patents to his name. His work primarily focuses on the development of innovative transistor designs that enhance the performance and efficiency of electronic devices.

Latest Patents

Among his latest inventions, Kirchgessner has developed a "Base Silicide on Monocrystalline Base Structures," which is a transistor featuring an emitter, base, and collector. This design includes a monocrystalline base layer, where a sacrificial material is formed and subsequently removed to expose part of the layer for the creation of a base silicide.

Another notable patent is the "Transistor with Monocrystalline Base Structures." This invention presents a semiconductor die containing a transistor with an emitter, base, and collector, where the base is an intrinsic structure within the monocrystalline semiconductor material. This innovation includes a unique process where an opening in the second semiconductor layer allows for the etching of the first layer to form a cavity for the growth of a monocrystalline intrinsic base, showcasing Kirchgessner's forward-thinking approach in semiconductor development.

Career Highlights

Kirchgessner has had a commendable career, collaborating with industry leaders such as Freescale Semiconductor and NXP USA Inc. His role in these companies has been pivotal in driving advancements in semiconductor technology, contributing to the development of next-generation electronic components.

Collaborations

Throughout his career, Kirchgessner has worked alongside talented individuals such as Jay Paul John and Vishal P. Trivedi. These collaborations have facilitated a rich exchange of ideas and have fostered an environment of innovation, which has significantly impacted the semiconductor landscape.

Conclusion

James Albert Kirchgessner remains an influential figure in the realm of semiconductor innovations. His portfolio of patents and collaborative endeavors mark him as a key contributor to the evolution of transistor technology, paving the way for advancements in electronics that continue to shape the industry.

Profile summary based on public USPTO records.
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