The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
May. 13, 2021
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
James Albert Kirchgessner, Tempe, AZ (US);
Jay Paul John, Chandler, AZ (US);
Steven Kwan, Austin, TX (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42304 (2013.01); H01L 29/401 (2013.01); H01L 29/456 (2013.01); H01L 29/66242 (2013.01); H01L 29/7375 (2013.01);
Abstract
A semiconductor device and a method of making a semiconductor device. The device includes an emitter. The device also includes a collector. The device further includes a base stack. The base is located between the emitter and the collector. The base stack includes an intrinsic base region. The device further includes a base electrode. The base electrode comprises a silicide. The silicide of the base electrode may be in direct contact with the base stack. The device may be a heterojunction bipolar transistor.