The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jun. 07, 2022
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Ljubo Radic, Gilbert, AZ (US);
Ronald Willem Arnoud Werkman, Groesbeek, NL;
James Albert Kirchgessner, Tempe, AZ (US);
Jay Paul John, Chandler, AZ (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66242 (2013.01); H01L 29/732 (2013.01); H01L 29/7378 (2013.01);
Abstract
A transistor with an emitter, base, and collector. The base includes a monocrystalline base layer. A sacrificial material is formed on the monocrystalline base layer. The sacrificial material is removed to expose a portion of the monocrystalline base layer. A base silicide includes a portion formed on the portion of the base monocrystalline base layer that was exposed by the removal of the sacrificial material.