The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
Jun. 17, 2021
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Jay Paul John, Chandler, AZ (US);
James Albert Kirchgessner, Tempe, AZ (US);
Ljubo Radic, Gilbert, AZ (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41708 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01);
Abstract
A semiconductor device includes an emitter, a base, and a collector. A portion of the collector is located below a trench in a substrate. A collector silicide is located on at least a portion of a bottom portion of the trench and on at least a portion of a sidewall of the trench. The collector silicide structure is electrically coupled to a collector contact structure.
Quick Actions:
John, Jay. (2023). Silicided collector structure (U.S. Patent No. 11640975). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11640975
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile