The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Sep. 06, 2022
Nxp Usa, Inc., Austin, TX (US);
Jay Paul John, Chandler, AZ (US);
James Albert Kirchgessner, Tempe, AZ (US);
Ljubo Radic, Gilbert, AZ (US);
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
NXP USA, INC., Austin, TX (US);
Abstract
A method for forming a transistor with an emitter, intrinsic base, and collector. The base includes a semiconductor layer doped with a conductivity dopant to provide for a lower resistivity path to the intrinsic base. After the formation of a layer over a substrate, an emitter window opening is formed in the layer. The semiconductor layer is formed through the opening by a deposition process. A portion of the semiconductor layer is then removed. An emitter electrode is formed that includes at least a portion located in the opening. A remaining portion of the semiconductor layer is in a conductive path to the intrinsic base.