The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Dec. 26, 2019
Nxp Usa, Inc., Austin, TX (US);
Ljubo Radic, Gilbert, AZ (US);
Jay Paul John, Chandler, AZ (US);
Bernhard Grote, Phoenix, AZ (US);
James Albert Kirchgessner, Tempe, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A semiconductor device includes a semiconductor substrate with a collector region formed within the semiconductor substrate. A base region, including a first base region and a second base region, is formed over the collector region. An extrinsic base region is formed laterally adjacent to and coupled to the second base region. A base link region is disposed proximate to the second base region, wherein the base link region couples the extrinsic base sidewall to the second base region. A method for forming a semiconductor device includes forming the collector region within the semiconductor substrate, forming a plurality of dielectric layers over the collector region, forming an extrinsic base layer over the collector region, etching an emitter window, forming the first base region over the collector region, forming the second base region over the first base region, wherein forming the second base region includes forming the base link region.