The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Dec. 15, 2021
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Jay Paul John, Chandler, AZ (US);

Ljubo Radic, Gilbert, AZ (US);

James Albert Kirchgessner, Tempe, AZ (US);

Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66242 (2013.01); H01L 29/165 (2013.01); H01L 29/737 (2013.01);
Abstract

A semiconductor die includes a transistor with an emitter, base, and collector. The base includes an intrinsic base that is located in monocrystalline semiconductor material grown in an opening of a first semiconductor layer. A second semiconductor layer is located above the first semiconductor layer and includes a monocrystalline portion. In some embodiments, an opening was formed in the second semiconductor layer wherein a portion of the underlying first semiconductor layer was etched to form a cavity in which a monocrystalline intrinsic base was grown.


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