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Woburn, MA, United States of America

Jacek J Lagowski

USPTO Granted Patents = 23 (Patent Applications = 1)

EPO Patents = 1

Average Co-Inventor Count = 2.6

ph-index = 13

Forward Citations = 662(Granted Patents)

Location History:

Woburn, MA (US) (1991)
Tampa, FL (US) (1993 - 2024)

Company Filing History:

Semiconductor Diagnostics, Inc.

Semilab Semiconductor Physics Laboratory Co., Ltd.

University of South Florida

Semiconductor Diagostics, Inc.

Semilab Sdi LLC

Semiconductor Physics Laboratory Co., Ltd.

7. 3 out of 832,891

Other

patents

where one patent can have more than one assignee

Years Active: 1991-2024

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23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12154833 - Semiconductor doping characterization method using photoneutralization time constant of corona surface charge (2024-11-26),

2. 12027430 - Semiconductor doping characterization method using photoneutralization time constant of corona surface charge (2024-07-02),

3. 11561254 - Topside contact device and method for characterization of high electron mobility transistor (HEMT) heterostructure on insulating and semi-insulating substrates (2023-01-24),

4. 10969370 - Measuring semiconductor doping using constant surface potential corona charging (2021-04-06),

5. 10763179 - Non-contact method to monitor and quantify effective work function of metals (2020-09-01),

6. 9685906 - Photoluminescence mapping of passivation defects for silicon photovoltaics (2017-06-20),

7. 8912799 - Accurate measurement of excess carrier lifetime using carrier decay method (2014-12-16),

8. 8093920 - Accurate measuring of long steady state minority carrier diffusion lengths (2012-01-10),

9. 7202691 - Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers (2007-04-10),

10. 6815974 - Determining composition of mixed dielectrics (2004-11-09),

11. 6771091 - Method and system for elevated temperature measurement with probes designed for room temperature measurement (2004-08-03),

12. 6680621 - Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current (2004-01-20),

13. 6597193 - Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current (2003-07-22),

14. 6538462 - Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge (2003-03-25),

15. 6512384 - Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages (2003-01-28),

Title: Inventor Jacek J Lagowski - Revolutionizing Technology

Introduction: Jacek J Lagowski is a visionary inventor based in Woburn, MA, known for his groundbreaking contributions to the field of technology.

Latest Patents: Lagowski's latest patents include innovative solutions in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Lagowski has established himself as a leading figure in the tech industry, with numerous successful inventions that have had a significant impact on various sectors.

Collaborations: Lagowski has collaborated with top research institutions, leading companies, and brilliant minds in the industry, fostering a culture of innovation and excellence in all his projects.

Conclusion: Jacek J Lagowski's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the field, with a legacy that will continue to inspire future generations of inventors.

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