The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Jun. 21, 2024
Semilab Semiconductor Physics Laboratory Co., Ltd., Budapest, HU;
Marshall D. Wilson, Tampa, FL (US);
Jacek Lagowski, Tampa, FL (US);
Carlos Almeida, Tampa, FL (US);
Bret Schrayer, Tampa, FL (US);
Alexandre Savtchouk, Tampa, FL (US);
SEMILAB Semiconductor Physics Laboratory Co., Ltd., Budapest, HU;
Abstract
Methods of characterizing semiconductor doping in a wide bandgap semiconductor sample include: measuring an initial value, V, of a surface voltage at a region of a surface of the semiconductor sample in the dark; charging the region to deep depletion in the dark by depositing a prescribed corona charge at the region; measuring the surface voltage value in the dark at the region after charging; illuminating the charged region with light of a specific photon flux, f, having a photon energy above the semiconductor bandgap sufficient to generate free minority carriers in the semiconductor sample causing photoneutralization of the corona charge; monitoring of a photoneutralization induced corona charge decay at the region vs. illumination time, t, using a noncontact time resolved measurement of surface voltage, V(t); analyzing the monitored time resolved surface voltage decay data V(t) to determine values for a parameter characteristic of a photoneutralization induced corona charge decay at the regions; and using the parameter at a specific photon flux, ϕ, to characterize the property of the semiconductor at the region based on the values of the parameter.