The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jun. 26, 2014
Applicant:
Semilab Sdi Llc, Tampa, FL (US);
Inventors:
Jacek Lagowski, Tampa, FL (US);
Marshall D. Wilson, Tampa, FL (US);
Ferenc Korsos, Budapest, HU;
György Nádudvari, Pilisszentivan, HU;
Assignee:
Semilab SDI LLC, Tampa, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); H02S 50/10 (2014.01); G01N 21/95 (2006.01); G01N 21/64 (2006.01); H02S 50/15 (2014.01);
U.S. Cl.
CPC ...
H02S 50/10 (2014.12); G01N 21/6489 (2013.01); G01N 21/9501 (2013.01); H02S 50/15 (2014.12);
Abstract
Methods for fast and accurate mapping of passivation defects in a silicon wafer involve capturing of photoluminescence (PL) images while the wafer is moving, for instance, when the wafer is transported on a belt in a fabrication line. The methods can be applied to in-line diagnostics of silicon wafers in solar cell fabrication. Example embodiments include a procedure for obtaining the whole wafer images of passivation defects from a single image (map) of photoluminescence intensity, and can provide rapid feedback for process control.