Pilisszentivan, Hungary

György Nádudvari

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: György Nádudvari: Innovator in Photovoltaic Technology

Introduction

György Nádudvari is a notable inventor based in Pilisszentivan, Hungary. He has made significant contributions to the field of photovoltaic technology, particularly in the area of defect mapping in silicon wafers. His innovative approach has the potential to enhance the efficiency of solar cell fabrication.

Latest Patents

Nádudvari holds a patent for "Photoluminescence mapping of passivation defects for silicon photovoltaics." This patent describes methods for fast and accurate mapping of passivation defects in silicon wafers. The techniques involve capturing photoluminescence (PL) images while the wafer is in motion, such as during transport on a fabrication line. This method can be applied to in-line diagnostics of silicon wafers, providing rapid feedback for process control.

Career Highlights

György Nádudvari has dedicated his career to advancing solar technology. His work at Semilab Sdi LLC has positioned him as a key player in the development of innovative solutions for the solar industry. His patent reflects his commitment to improving the efficiency and reliability of solar cell production.

Collaborations

Nádudvari has collaborated with esteemed colleagues, including Jacek J Lagowski and Marshall D Wilson. These partnerships have contributed to the advancement of research and development in photovoltaic technology.

Conclusion

György Nádudvari's contributions to the field of solar technology through his innovative patent demonstrate his expertise and commitment to enhancing photovoltaic efficiency. His work continues to influence the solar industry positively.

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