The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Jul. 27, 2005
Jacek Lagowski, Tampa, FL (US);
Piotr Edelman, Tampa, FL (US);
Dmitriy Marinskiy, Tampa, FL (US);
Joseph Nicholas Kochey, St. Petersburg, FL (US);
Carlos Almeida, Tampa, FL (US);
Jacek Lagowski, Tampa, FL (US);
Piotr Edelman, Tampa, FL (US);
Dmitriy Marinskiy, Tampa, FL (US);
Joseph Nicholas Kochey, St. Petersburg, FL (US);
Carlos Almeida, Tampa, FL (US);
Semiconductor Diagnostics, Inc., Tampa, FL (US);
Abstract
A non-contact method is described for acquiring the accurate charge-voltage data on miniature test sites of semiconductor wafer wherein the test sites are smaller than 100 μm times 100 μm. The method includes recognizing the designated test site, properly aligning it, depositing a prescribed dose of ionic charge on the surface of the test site, and precise measuring of the resulting voltage change on the surface of the test site. The method further compromises measuring of the said voltage change in the dark and/or under strong illumination without interference from the laser beam employed in the Kelvin Force probe measurement of the voltage. The method enables acquiring of charge-voltage data without contacting the measured surface of the wafer and without contaminating the wafer. Thus, the measured wafer can be returned to IC fabrication line for further processing.